Pustynia Matematyczny Nieznajomy atomically thin mos2 a new direct gap semiconductor Zajazd schemat Zastaw
Strain engineering band gap, effective mass and anisotropic Dirac-like cone in monolayer arsenene: AIP Advances: Vol 6, No 3
Monolayer MoS2 for nanoscale photonics
Nanomaterials | Free Full-Text | Benchmark Investigation of Band-Gap Tunability of Monolayer Semiconductors under Hydrostatic Pressure with Focus-On Antimony | HTML
PDF] Stability of direct band gap under mechanical strains for monolayer MoS2, MoSe2, WS2 and WSe2 | Semantic Scholar
PDF] Indirect-to-direct band gap crossover in few-layer MoTe₂. | Semantic Scholar
PDF) Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
PDF) Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts | Scientific Reports
Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications | Light: Science & Applications
Directly visualizing the momentum-forbidden dark excitons and their dynamics in atomically thin semiconductors
High-harmonic generation from an atomically thin semiconductor | Nature Physics
Atomically thin p–n junctions with van der Waals heterointerfaces | Nature Nanotechnology
Band structure of MoS2 (A) showing the direct and indirect band gap, as... | Download Scientific Diagram
Transition metal dichalcogenide monolayers - Wikipedia
Direct bandgap engineering with local biaxial strain in few-layer MoS2 bubbles | SpringerLink
Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2 | Scientific Reports
PDF] Atomically thin MoS₂: a new direct-gap semiconductor. | Semantic Scholar
Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions - Zhang - 2015 - Angewandte Chemie International Edition - Wiley Online Library
Atomic–layer–confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides
PDF) Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
The fabrication of atomically thin-MoS2 based photoanodes for photoelectrochemical energy conversion and environment remediation: A review - ScienceDirect
Bandgap broadening at grain boundaries in single-layer MoS2 | SpringerLink
Color online) Electronic band structure and corresponding total and... | Download Scientific Diagram
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures | Scientific Reports